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MICROWAVE POWER MMIC AMPLIFIER MICROWAVE SEMICONDUCTOR TECHNICAL DATA
TMD1013-1-431
FEATURES
n HIGH POWER P1dB=33.0dBm at 9.5GHz to 12.0GHz n HIGH GAIN G1dB=25.0dB at 9.5GHz to 12.0GHz n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE
ABSOLUTE MAXIMUM RATINGS ( Ta= 25C )
CHARACTERISTICS Drain Supply Voltage Gate Supply Voltage Input Power Flange Temperature Storage Temperature SYMBOL VDD VGG Pin Tf Tstg UNIT V V dBm C C RATING 15 -10 15 -30 +80 -65 +175
RF PERFORMANCE SPECIFICATIONS ( Ta= 25C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Gain Flatness Drain Current Power Added Efficiency 3 Order Intermodulation Distortion
rd
SYMBOL P1dB G1dB G IDD add IM3
CONDITIONS
UNIT dBm
MIN. 31.0 21.0 -42
TYP. MAX. 33.0 25.0 1.4 14 -45 2.5 1.8
VDD= 10V VGG= -5V
dB dB A %
f = 9.5 - 12.0GHz
2 tone @ Po=19dBm(S.C.L.)
dBc
uThe information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product.
Rev. Mar. 2006
TMD1013-1-431
PACKAGE OUTLINE (2-9E1D)
2.40.2
11
0.25 0.1
0.3 0.2
0.50.2
Unit in mm
13.4 0.2
17.8 0.2
j k l m n
s r
7.6 0.2
jknrs: No Connection
(Grounded)
q p o
l: RF Input m: VGG o : No Connection (Open) p: VDD q : RF Output
11 :
5.2 0.2
8.8 0.2
Orientation Tab
2.00.5
8.350.2
2.00.5
0.10.05
0.750.2
025.0.2
RECOMMENDED BIAS CONFIGURATION
7 : VDD 1pF 1,000pF 10-50F
3:RF Input TMD1013-1-431 50 Matching
2.4 MAX.
10.3
8:RF Output 50 Matching
GND : Base Plate 4 : VGG 10-50F 1,000pF 1pF
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C. Flanges of devices should be attached using screws and washers. Recommended
torque is 0.18-0.20 N*m. 2

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